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| Semiconductor SBT5551 NPN Silicon Transistor Descriptions * General purpose amplifier * High voltage application Features * high collector breakdown voltage : VCBO = 180V, VCEO = 160V * Low collector saturation voltage : VCE(sat)=0.5V(MAX.) * Complementary pair with SBT5401 Ordering Information Type NO. SBT5551 Marking FNF Package Code SOT-23 Outline Dimensions unit : mm 2.40.1 1.300.1 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1.12 Max. 2.90.1 KST-2012-000 0.124 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 0~0.1 -0.03 +0.05 1 SBT5551 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 180 160 6 600 200 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector-Emitter saturation voltage Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE (1) hFE (2) hFE (3) VCE(sat)(1) VBE(sat)(1) fT Cob * Test Condition IC=100A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz Min. Typ. Max. 180 160 6 80 80 30 100 0.2 0.5 1 1 400 6 250 100 100 Unit V V V nA nA V V V V MHz pF VCE(sat)(2)* * VBE(sat)(2)* * : Pulse Tester : Pulse Width 300s, Duty Cycle 2.0% KST-2012-000 2 SBT5551 Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 IC - VBE Fig. 3 fT - IC v Fig. 4 VCE(sat), VBE(sat) - IC Fig. 5 Cob - VCB KST-2012-000 3 |
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